彭宇恒, 陈松岩, 陈维友, et al. The Theoretical Analysis of Gain and Linewidth Enhancement Factor of Modulation-Doped Compress Strained Multi-Quantum-Well Lasers[J]. Acta Electronica Sinica, 1996, (11).
彭宇恒, 陈松岩, 陈维友, et al. The Theoretical Analysis of Gain and Linewidth Enhancement Factor of Modulation-Doped Compress Strained Multi-Quantum-Well Lasers[J]. Acta Electronica Sinica, 1996, (11).DOI:
The Theoretical Analysis of Gain and Linewidth Enhancement Factor of Modulation-Doped Compress Strained Multi-Quantum-Well Lasers
The gain of compress strained multiple-quantum-well(CSMQW) lasers is theoretically analyzed and calculated.The energy movement of the hole Fermi level and the variation of the differential gain in the condition of p-type modulation doping(p-MD) in CSMQW barrier is also discussed.The relationship between the linewidth enhancement factor(α) and compress strain
p -MD density and injection carrier density is evaluated.The results show that strain effect and large injection can reduce α-parameter
however
it’s difficult to make the zero-point of α- parameter penetrate to the gain region
while the use of the P-MD can effectively reduce α-parameter at some wavelength in the gain region to zero.The increase of compressed strain and injection carrier density can effectively improve the reduction of α-parameter caused by P-MD.
Differential Phase and Differential Gain Testing of Analog-to-Ditital Converters ( 1.University of Electronics Science & Technology,Chengdu,Sichuan 610054,China;
Electron-Sheet-Density Model in Strain-Si Modulation-Doped NMOSFET
Related Author
LI Xun-bo
CHEN Guang-ju
YAN Shun-bing
HU Hui-yong
ZHANG He-ming
DAI Xian-ying
WANG Shun-xiang
ZHU Yong-gang
Related Institution
电子科技大学
Sichuan Institute of Solid-state Circuit
电子科技大学四川成都
Sichuan Institute of Solid-state CircuitChongqing 400060China
Key Lab of Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University