The Simulation of Device Characteristic and Theoretical Analysis of Polysilicon Emitter Transistors under High－Level Injection

郑云光; 李斌桥; 李树荣; 郭维廉; 高松; 张建杰; 王阳元; 张利春; 马平西

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The Simulation of Device Characteristic and Theoretical Analysis of Polysilicon Emitter Transistors under High－Level Injection

更新时间：2025-12-08

- The Simulation of Device Characteristic and Theoretical Analysis of Polysilicon Emitter Transistors under High－Level Injection
- Acta Electronica Sinica Issue 2, (1997)
- 作者机构：
  
  1. 天津大学电子工程系
  2. 北京大学微电子学研究所
  3. 天津大学电子工程系北京大学微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN32
- Published：1997
- 稿件说明：
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[1]郑云光,李斌桥,李树荣,郭维廉,高松,张建杰,王阳元,张利春,马平西.在大注入下多晶硅发射极晶体管特性模拟与理论分析[J].电子学报,1997(02):96-99.

郑云光, 李斌桥, 李树荣, et al. The Simulation of Device Characteristic and Theoretical Analysis of Polysilicon Emitter Transistors under High－Level Injection[J]. Acta Electronica Sinica, 1997, (2).
[1]郑云光,李斌桥,李树荣,郭维廉,高松,张建杰,王阳元,张利春,马平西.在大注入下多晶硅发射极晶体管特性模拟与理论分析[J].电子学报,1997(02):96-99. DOI：

郑云光, 李斌桥, 李树荣, et al. The Simulation of Device Characteristic and Theoretical Analysis of Polysilicon Emitter Transistors under High－Level Injection[J]. Acta Electronica Sinica, 1997, (2). DOI：

摘要

本文利用经适当修改的Ｙｉｈ－ＦｅｎｇＣｈｙａｎ等人的ＰＥＴ大注人模型编制了程序，结合实例模拟了在大注入条件下具有发射区、基区指数掺杂分布的ＰＥＴ的输人特性、输出特性、电流增益和频率特性（ｆｒ和ｆｍａｘ），并对一些特性曲线进行了分析．此程序可用于研究ＰＥＴ特性与器件结构参数之间的关系．

Abstract

In this paper

a calculated program for high-level injection model of PET has been made based on the modified model of PET proposed by Yih-Feng Chyan et al. The input and output characteristic

current gain and frequency response （fT and fmax）of PET with exponential doping profile in emitter and base under high-level injection have been simulated by taking the measured data of studied device as the input parameters

and some characteristics have been analized theoretically. The program can be used to study the relation between the device characteristics and device structure parameters for PET.

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