The Preliminary Study of Photo Negative Resistance Transistor

郭维廉; 李树荣; 郑云光

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The Preliminary Study of Photo Negative Resistance Transistor

更新时间：2025-12-08

- The Preliminary Study of Photo Negative Resistance Transistor
- Acta Electronica Sinica Issue 2, (1997)
- 作者机构：
  
  天津大学电子工程系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN32
- Published：1997
- 稿件说明：
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[1]郭维廉,李树荣,郑云光.光电负阻晶体管的初步研究[J].电子学报,1997(02):100-102.

郭维廉, 李树荣, 郑云光. The Preliminary Study of Photo Negative Resistance Transistor[J]. Acta Electronica Sinica, 1997, (2).
[1]郭维廉,李树荣,郑云光.光电负阻晶体管的初步研究[J].电子学报,1997(02):100-102. DOI：

郭维廉, 李树荣, 郑云光. The Preliminary Study of Photo Negative Resistance Transistor[J]. Acta Electronica Sinica, 1997, (2). DOI：

摘要

本文对“λ”双极晶体管（ＬＢＴ）型光电负阻晶体管（或称为光电“λ”双极晶管体ＰＬＢＴ）［１］，首次给出了完整的等效电路。并以此等效电路为基础，用ＰＳＰＩＣＥ电路模拟程序，对ＰＬＢＴ的Ｉｐｈ—ＶｃＥ特性进行了模拟．模拟结果与从ＰＬＢＴ实验性器件实测的Ｉｐｈ－ＶｃＥ特性吻合得很好．初步研究还表明，此器件除了作为光探测器外，还具有光生振荡和光控调频等功能．

Abstract

In this paper

a complete equivalent circuit of the photo negative resistance transistor with LBT structure（or photo lambda bipolar transistor PLBT）has been proposed for the first time.Based on this equivalent circuit

and by using the PSPICE circuit simulation program

the simulation on IPh-VcE characteristic of PLBT has been made. The simulation result is in good agreement with that measured from the PLBT experimental device. From initial investigation

it isshown that besides as a photodetector

this device has also the functions of photo-induced oscillation and photo-controlled frequency modulation.

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