1/f Noise as a Tool to Characterize Negative Bias Instability in MOSFET

庄奕琪; 孙青; 侯洵

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1/f Noise as a Tool to Characterize Negative Bias Instability in MOSFET

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- 1/f Noise as a Tool to Characterize Negative Bias Instability in MOSFET
- Acta Electronica Sinica Issue 5, (1996)
- 作者机构：
  
  1. 西安电子科技大学微电子所
  2. 中国科学院西安光学精密机械研究所
  3. 西安电子科技大学微电子所中国科学院西安光学精密机械研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.1
- Published：1996
- 稿件说明：
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[1]庄奕琪,孙青,侯洵.用1／f噪声表征MOSFET的负温偏不稳定性[J].电子学报,1996(05):38-42.

庄奕琪, 孙青, 侯洵. 1/f Noise as a Tool to Characterize Negative Bias Instability in MOSFET[J]. Acta Electronica Sinica, 1996, (5).
[1]庄奕琪,孙青,侯洵.用1／f噪声表征MOSFET的负温偏不稳定性[J].电子学报,1996(05):38-42. DOI：

庄奕琪, 孙青, 侯洵. 1/f Noise as a Tool to Characterize Negative Bias Instability in MOSFET[J]. Acta Electronica Sinica, 1996, (5). DOI：

摘要

负温偏不稳定性是ＭＯＳ器件最重要的可靠性问题之一。本文从实验上发现ＭＯＳ－ＦＥＴ的１／ｆ噪声与其负温偏不稳定性相关，初始１／ｆ噪声谱密度正比于负温偏应力下的跨导退化量。理论分析表明，导致负温偏不稳定性的与产生１／ｆ噪声的均为Ｓｉ－ＳｉＯ２界面过渡层内的电荷与陷阱。据此，１／ｆ噪声测量可作为快速评价与分析ＭＯＳ器件负温偏不稳定性的一种有效手段。

Abstract

It is found in experimment that 1/f noise is closely correlated with negative-bias instability in MOSFETs

which is one of the most important reliability problems for MOS devices.The initial noise spectrum density is proportional to the drift of transconductance of MOSFETs that are subjected to negative bias and high temperature. And

it is shown from the mechanism analysis that both the instability and the noise are induced by oxide charges and traps near Si-SiO2 interface. 1/f noise may therefore be used as an effective tool to predict and analyze negative-bias instability in MOS devices.

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