Research on Technology of Local Recrystallization SOI by Laser Single Scanning

王红卫; 杨景铭; 钱佩信

您当前的位置：

首页 >

文章列表页 >

Research on Technology of Local Recrystallization SOI by Laser Single Scanning

更新时间：2025-12-08

- Research on Technology of Local Recrystallization SOI by Laser Single Scanning
- Acta Electronica Sinica Issue 2, (1996)
- 作者机构：
  
  清华大学微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN430.5
- Published：1996
- 稿件说明：
移动端阅览
[1]王红卫,杨景铭,钱佩信.激光单条扫描定域再结晶SOI技术研究[J].电子学报,1996(02):22-27.

王红卫, 杨景铭, 钱佩信. Research on Technology of Local Recrystallization SOI by Laser Single Scanning[J]. Acta Electronica Sinica, 1996, (2).
[1]王红卫,杨景铭,钱佩信.激光单条扫描定域再结晶SOI技术研究[J].电子学报,1996(02):22-27. DOI：

王红卫, 杨景铭, 钱佩信. Research on Technology of Local Recrystallization SOI by Laser Single Scanning[J]. Acta Electronica Sinica, 1996, (2). DOI：

摘要

本文描述了用于制作三维集成电路（３Ｄ－ＩＣ）的激光再结晶工艺的实验装置和工艺过程，报道了反射条结构样品的单条扫描定域再结晶的实验结果并作了相应的讨论。实验表明，再结晶质量与激光功率、预热温度、高反区条宽以及激光扫描速率等因素有关，并受到工艺稳定性的影响；利用激光单条扫描定域再结晶技术已获得１２μｍ宽度、芯片长度的能用以制作高性能ＭＯＳ－ＦＥＴ的ＳＯＩ单晶条。

Abstract

This paper describes the experimental equipment and technical process of laser-recrystallization for three dimensional integrated circuit（3D-IC）

reports the experimental results of local recrystallization by laser single scanning on samples with reflective-stripe structure

and makes some discussion about these results.The experimental results indicate that the quality of recrystallization is related to laser power.preheating temperature

width of stripes with high reflectivity and scanning velocity of laser.Also

the stability of technique affects the quality.With technology of local recrystallization by single laser scanning

long single-crystal SOI（silicon-on-insulator） stripes which can be used to make high-quality MOSFET have been obtained.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Study on the Microstructure of Laser-Recrystallization SOI with Reflecting-Stripe

Related Author

刘峥

邵贝羚

李永洪

王红卫

杨景铭

钱佩信

Related Institution

General Research Institute for Non-ferrous Metals,Beijing100088)Wang Hongwei

Yang Jingming

Tsien Peihsin

⁰