A General Small Signal Transmission Line Model of the Superconducting Field Effect Devices

蒋建飞; 蔡琪玉; 汤玉生; 周正利

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A General Small Signal Transmission Line Model of the Superconducting Field Effect Devices

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- A General Small Signal Transmission Line Model of the Superconducting Field Effect Devices
- Acta Electronica Sinica Issue 5, (1996)
- 作者机构：
  
  上海交通大学微电子研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386
- Published：1996
- 稿件说明：
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[1]蒋建飞,蔡琪玉,汤玉生,周正利.超导场效应器件的统一小信号传输线模型[J].电子学报,1996(05):43-47+52.

蒋建飞, 蔡琪玉, 汤玉生, et al. A General Small Signal Transmission Line Model of the Superconducting Field Effect Devices[J]. Acta Electronica Sinica, 1996, (5).
[1]蒋建飞,蔡琪玉,汤玉生,周正利.超导场效应器件的统一小信号传输线模型[J].电子学报,1996(05):43-47+52. DOI：

蒋建飞, 蔡琪玉, 汤玉生, et al. A General Small Signal Transmission Line Model of the Superconducting Field Effect Devices[J]. Acta Electronica Sinica, 1996, (5). DOI：

摘要

本文提出了超导场效应器件的统一小信号模型。建立这个模型的出发点是基于用有源分布的超导传输线对超导场效应器件的超导沟道区动态导纳进行模拟，经逐次沟道近似，得到了既适用于超导表面场效器件（ＭＯＳｕＦＥＴｓ）又适用于超导ＰＮ结型或肖特基结型场效应器件（ＪＳｕＦＥＴｓ）或（ＭＥＳｕＦＥＴｓ）的统一小信号模型。

Abstract

A general small signal transmission line model of superconducting field effect devices is treated analytically. The analysis is based upon an active

distributed transmission line analogy to the kinetic admittance of a superconducting channel region of the superconducting field effect devices. Within the limitation of the gradual channel approximation

a general analysis is presented which is applicable to both superconducting MOSu and PN（or Schottky） junction field effect devices.

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