Study on the Properties and Application of the Si<sub>3</sub>N<sub>4</sub> Thin Film Prepared by ECR-PECVD

任兆杏; 陈俊芳; 丁振峰; 史义才; 宋银根; 王道修

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Study on the Properties and Application of the Si₃N₄ Thin Film Prepared by ECR-PECVD

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- Study on the Properties and Application of the Si₃N₄ Thin Film Prepared by ECR-PECVD
- Acta Electronica Sinica Issue 2, (1996)
- 作者机构：
  
  1. 中国科学院等离子体物理研究所
  2. 中国华晶电子集团公司
  3. 中国科学院等离子体物理研究所中国华晶电子集团公司
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.055
- Published：1996
- 稿件说明：
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[1]任兆杏,陈俊芳,丁振峰,史义才,宋银根,王道修.ECR－PECVD制备Si_3N_4薄膜的特性及其应用的研究[J].电子学报,1996(02):56-59.

任兆杏, 陈俊芳, 丁振峰, et al. Study on the Properties and Application of the Si₃N₄ Thin Film Prepared by ECR-PECVD[J]. Acta Electronica Sinica, 1996, (2).
[1]任兆杏,陈俊芳,丁振峰,史义才,宋银根,王道修.ECR－PECVD制备Si_3N_4薄膜的特性及其应用的研究[J].电子学报,1996(02):56-59. DOI：

任兆杏, 陈俊芳, 丁振峰, et al. Study on the Properties and Application of the Si₃N₄ Thin Film Prepared by ECR-PECVD[J]. Acta Electronica Sinica, 1996, (2). DOI：

摘要

本文利用ＥＣＲ－ＰＥＣＶＤ技术在不同沉积温度下制备了Ｓｉ３Ｎ４薄膜，利用Ｓｉ３Ｎ４薄膜的透射光强度曲线计算了Ｓｉ３Ｎ４薄膜的折射率和膜厚，计算结果与实测值符合较好。结果表明，随着沉积温度的提高，Ｓｉ３Ｎ４薄膜的折射率增大，致密性提高，Ｓｉ３Ｎ４薄膜厚度在６０ｍｍ直径范围内不均匀度小于５％。测定了Ｓｉ３Ｎ４薄膜的显微硬度。利用荧光分光光度计测定了Ｓｉ３Ｎ４薄膜的光致发光效应。初步进行了Ｓｉ３Ｎ４薄膜的超高频大功率晶体管器件中作为钝化膜的应用研究。

Abstract

The Si3N4 thin films have been prepared by the ECR-PECVD technology under different deposition temperatures.The refractive index and thickness of the Si3N4 thin film have been calculated with the transmittance curve of the Si3N4 thin film

and the results agree with experimental measure.The results show that the density and refractive index increase with the increasing deposition temperature

the radial thickness nonuniformity of the Si3N4 thin film is about ±5% in the range of φ60mm.The microhardness has been measured.The photoluminescence effect of the Si3N4 thin film has been measured by the fluorescence spectrophotometer.The application of the passivation film of the superfrequency large power semiconducting transistor has been preliminarily investigated.

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陈俊芳

王卫乡

任兆杏

丁振峰

王道修

宋银根

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Institute of Quantum Electronics, South China Normal University, Guangzhou 510631)Ren Zhaoxing

Ding Zhenfeng

中科院等离子体物理研究所!合肥

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中国华晶电子集团公司!无锡

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Study on the Properties and Application of the Si3N4 Thin Film Prepared by ECR-PECVD

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Study on the Properties and Application of the Si₃N₄ Thin Film Prepared by ECR-PECVD