A Fully Depleted Short-Channel SOI LDD/LDS MOSFET Model for VLSI Circuits Analysis

奚雪梅; 王阳元

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A Fully Depleted Short-Channel SOI LDD/LDS MOSFET Model for VLSI Circuits Analysis

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- A Fully Depleted Short-Channel SOI LDD/LDS MOSFET Model for VLSI Circuits Analysis
- Acta Electronica Sinica Issue 5, (1996)
- 作者机构：
  
  北京大学微电子研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN4
- Published：1996
- 稿件说明：
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[1]奚雪梅,王阳元.适于器件及电路分析的全耗尽短沟道LDD／LDS　SOI　MOSFET器件模型[J].电子学报,1996(05):53-57+62.

奚雪梅, 王阳元. A Fully Depleted Short-Channel SOI LDD/LDS MOSFET Model for VLSI Circuits Analysis[J]. Acta Electronica Sinica, 1996, (5).
[1]奚雪梅,王阳元.适于器件及电路分析的全耗尽短沟道LDD／LDS　SOI　MOSFET器件模型[J].电子学报,1996(05):53-57+62. DOI：

奚雪梅, 王阳元. A Fully Depleted Short-Channel SOI LDD/LDS MOSFET Model for VLSI Circuits Analysis[J]. Acta Electronica Sinica, 1996, (5). DOI：

摘要

本文系统描述了全耗尽短沟道ＬＤＤ／ＬＤＳＳＯＩＭＯＳＦＥＴ器件模型的电流电压特性。该模型扩展了我们原有的薄膜全耗尽ＳＯＩＭＯＳＦＥＴ模型，文中着重分析了器件进入饱和区后出现的沟道长度调制效应，及由于ＬＤＤ／ＬＤＳ区的存在对本征ＭＯＳ器件电流特性的影响。模型计算结果与实验曲线吻合较好。同时，本电流模型将本征ＭＯＳＦＥＴ模型与ＬＤＤ／ＬＤＳ区分开，形式简洁，参数提取方便，便于移植入电路模拟程序中。

Abstract

A physical model for the fully depleted short-channel LDD/LDS SOI MOSFET model is developed

which expands our previous thin-film SOI MOSFET model

focusing on channel-length modulation when the SOI MOSFET operates in the saturation region

and the influences of LDD/LDS structure on primary SOI MOSFET I-V characteristics. Our model has a good agreement with experimental results. Moreover

the model describes primary MOSFET model and LDD/LDS structure’ s effects seperately with simple formula and easy parameters’ extraction

which facilitates the implemetaion of this model into circuit simulators such as SPICE.

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