Self-Sealed Silicon Field Emitting Diode Operating at Low Voltage

秦明; 黄庆安; 魏同立

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Self-Sealed Silicon Field Emitting Diode Operating at Low Voltage

更新时间：2025-12-08

- Self-Sealed Silicon Field Emitting Diode Operating at Low Voltage
- Acta Electronica Sinica Issue 8, (1996)
- 作者机构：
  
  东南大学微电子中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN103
- Published：1996
- 稿件说明：
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[1]秦明,黄庆安,魏同立.自封闭低压硅场致发射二极管的研究[J].电子学报,1996(08):115-117.

秦明, 黄庆安, 魏同立. Self-Sealed Silicon Field Emitting Diode Operating at Low Voltage[J]. Acta Electronica Sinica, 1996, (8).
[1]秦明,黄庆安,魏同立.自封闭低压硅场致发射二极管的研究[J].电子学报,1996(08):115-117. DOI：

秦明, 黄庆安, 魏同立. Self-Sealed Silicon Field Emitting Diode Operating at Low Voltage[J]. Acta Electronica Sinica, 1996, (8). DOI：

摘要

本文首次利用硅片直接键合（ＳＤＢ）技术实现了具有一定真空度的自封闭硅微二极管．实验测得该４０×４０阵列场发射二极管的开启电压只有５Ｖ左右，发射电流在２５Ｖ时可达１０－４Ａ量级．文中还对键合形成的微真空腔的机理进行了详细的分析．

Abstract

Based on silicon direct bonding（SDB） technology

a self-sealed micro diode with low vacuum is fabricated for the first time. The experiments show that the starting voltage of the diode is about 5 Volts

and the total emission current may reach 10￣（-4） A at about 25 V. The formation mechanisms of vacuum within the sealed cavity are also analyzed in detail.

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