An Analytic Threshold  Voltage Model for Fully  Depleted SOI MOSFET

付军; 田立林; 钱佩信; 罗台秦

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An Analytic Threshold Voltage Model for Fully Depleted SOI MOSFET

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- An Analytic Threshold Voltage Model for Fully Depleted SOI MOSFET
- Acta Electronica Sinica Issue 5, (1996)
- 作者机构：
  
  1. 清华大学微电子学研究所
  2. 香港科技大学电机电子工程系
  3. 清华大学微电子学研究所香港科技大学电机电子工程系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN302
- Published：1996
- 稿件说明：
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[1]付军,田立林,钱佩信,罗台秦.全耗尽SOI　MOSFET的阈电压的解析模型[J].电子学报,1996(05):48-52.

付军, 田立林, 钱佩信, et al. An Analytic Threshold Voltage Model for Fully Depleted SOI MOSFET[J]. Acta Electronica Sinica, 1996, (5).
[1]付军,田立林,钱佩信,罗台秦.全耗尽SOI　MOSFET的阈电压的解析模型[J].电子学报,1996(05):48-52. DOI：

付军, 田立林, 钱佩信, et al. An Analytic Threshold Voltage Model for Fully Depleted SOI MOSFET[J]. Acta Electronica Sinica, 1996, (5). DOI：

摘要

本文在近似求解全耗尽ＳＯＩＭＯＳＦＥＴ所满足的二维泊松方程的基础上，建立了阈电压的解析模型。通过与ＰＩＳＣＥＳ的模拟结果以及相应的实验数据的比较，证明本模型的误差较小。此外，本模型还具有计算简便、快速，形式直观，物理意义明确等优点。本模型的建立对于全耗尽ＳＯＩＭＯＳＦＥＴ电路模拟、器件物理特性研究及相关的工艺设计是很有意义的。

Abstract

An analytic threshold-voltage model has been established based on the approximate solution of the 2D Poisson’ s equation for the fully-depleted SOI MOSFET. The accuracy of the model is verified by comparison with the simulation results of PISCES and the corresponding experimental data. The model has also such advantages as simple and quick calculation

analytic expression and explicit physical meaning. The establishment of the model is helpful to circuit simulation

study of device physical characteristics and the corresponding process design for the fullydepleted SOI MOSFET.

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