g-r Noise Modeling and Deep-Level Analysis for Bipolar Transistors

庄奕琪; 孙青; 侯洵

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g-r Noise Modeling and Deep-Level Analysis for Bipolar Transistors

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- g-r Noise Modeling and Deep-Level Analysis for Bipolar Transistors
- Acta Electronica Sinica Issue 8, (1996)
- 作者机构：
  
  1. 西安电子科技大学微电子研究所
  2. 中国科学院西安光学精密机械研究所
  3. 西安电子科技大学微电子研究所中国科学院西安光学精密机械研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322.8
- Published：1996
- 稿件说明：
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[1]庄奕琪,孙青,侯洵.双极晶体管g－r噪声模型与深能级分析[J].电子学报,1996(08):111-114.

庄奕琪, 孙青, 侯洵. g-r Noise Modeling and Deep-Level Analysis for Bipolar Transistors[J]. Acta Electronica Sinica, 1996, (8).
[1]庄奕琪,孙青,侯洵.双极晶体管g－r噪声模型与深能级分析[J].电子学报,1996(08):111-114. DOI：

庄奕琪, 孙青, 侯洵. g-r Noise Modeling and Deep-Level Analysis for Bipolar Transistors[J]. Acta Electronica Sinica, 1996, (8). DOI：

摘要

本文根据发射结空间电荷区深能级缺陷诱生ｇ－ｒ噪声机构，建立了双极晶体管ｇ－ｒ噪声定量分析模型，从而对实验上观察到的双极晶体管ｇ－ｒ噪声的偏置特性作出了合理的解释．基于该模型，提出了一种利用ｇ－ｒ噪声测量确定双极型器件深能级参数的新方法．

Abstract

The physical mechanism of g-r noise induced by deep-level defects in the emitter space-charge region for bipolar transistors is analyzed quantitatively and a new model on g-r noise in bipolar transistors is developed. The experimental dependence of g-r noise on the bias voltage is explained from the model. Based on the model

the deep-level parameters in bipolar devices are determined by means of g-r noise measurement.

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