Electrical Performance of Multiconductor Interconnects for MCM with Perforated Reference Planes

Xue Zhiyong; Li Zhengfan

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Electrical Performance of Multiconductor Interconnects for MCM with Perforated Reference Planes

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- Electrical Performance of Multiconductor Interconnects for MCM with Perforated Reference Planes
- Acta Electronica Sinica Issue 3, (1996)
- 作者机构：
  
  上海交通大学电子工程系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN405.97
- Published：1996
- 稿件说明：
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[1]薛志勇,李征帆.多芯片组件带网孔接地板多导体互连线结构的电磁特性分析[J].电子学报,1996(03):65-67.

Xue Zhiyong, Li Zhengfan. Electrical Performance of Multiconductor Interconnects for MCM with Perforated Reference Planes[J]. Acta Electronica Sinica, 1996, (3).
[1]薛志勇,李征帆.多芯片组件带网孔接地板多导体互连线结构的电磁特性分析[J].电子学报,1996(03):65-67. DOI：

Xue Zhiyong, Li Zhengfan. Electrical Performance of Multiconductor Interconnects for MCM with Perforated Reference Planes[J]. Acta Electronica Sinica, 1996, (3). DOI：

摘要

本文给出一基于准静态场的直线法，来分析多芯片组件（ＭＣＭ）带有网孔接地板的多层多导体互连线结构的分析方法，以此提取等效传输线的特性参数。最后给出几个实例的计算结果。

Abstract

A quasi-static approach is demonstrated for the equivalent transmission line characterization of multiconductor interconnects for multichip-module（MCM） with perforated reference planes by using the "method of lines". The proposed method can be used to extract effective transmission line parameters for multiconductor interconnects. The results of some examples are also given.

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