The Fractal Description of the Defect Spatial Distributions on the Wafer of Integrated Circuits

郝跃; 朱春翔; 刘志镜

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The Fractal Description of the Defect Spatial Distributions on the Wafer of Integrated Circuits

更新时间：2025-12-08

- The Fractal Description of the Defect Spatial Distributions on the Wafer of Integrated Circuits
- Acta Electronica Sinica Issue 8, (1996)
- 作者机构：
  
  西安电子科技大学微电子所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN402
- Published：1996
- 稿件说明：
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[1]郝跃,朱春翔,刘志镜.集成电路硅片上缺陷空间分布的分形表征[J].电子学报,1996(08):10-14.

郝跃, 朱春翔, 刘志镜. The Fractal Description of the Defect Spatial Distributions on the Wafer of Integrated Circuits[J]. Acta Electronica Sinica, 1996, (8).
[1]郝跃,朱春翔,刘志镜.集成电路硅片上缺陷空间分布的分形表征[J].电子学报,1996(08):10-14. DOI：

郝跃, 朱春翔, 刘志镜. The Fractal Description of the Defect Spatial Distributions on the Wafer of Integrated Circuits[J]. Acta Electronica Sinica, 1996, (8). DOI：

摘要

本文主要研究集成电路硅片上缺陷的空间分布．在详细考察缺陷空间成团（Ｃｌｕｓｔｅｒ）效应的基础上，提出了一个新的描述缺陷空间分布的量——分数维，并建立了一个结构化的模型．用分数维对缺陷的成团效应及其空间分布进行详细地分析和计算机模拟，并验证了结果的正确性．本文为实现集成电路可制造性设计中的功能成品率精确表征奠定了基础．

Abstract

The defect spatial distributions on the wafer of IC’ s are studied. Based on the research of the spatial cluster effect of defect

a novel number-fractional dimension for describing the defect spatial distributions is proposed and a constructive fractal model is obtained. The defect spatial distributions and cluster are analysed in detail and simulated by means of the fractal model

and the correct results are given. The model can express the functional yield accurately and lay the foundation of design for manufacturability of IC’s.

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