Calculation of Electron Power Absorption in Microwave ECR Plasma

杨银堂; 恩云飞; 孙青

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Calculation of Electron Power Absorption in Microwave ECR Plasma

更新时间：2025-12-08

- Calculation of Electron Power Absorption in Microwave ECR Plasma
- Acta Electronica Sinica Issue 5, (1996)
- 作者机构：
  
  西安电子科技大学微电子所
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.4
- Published：1996
- 稿件说明：
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[1]杨银堂,恩云飞,孙青.微波ECR等离子体中的电子能量吸收的计算[J].电子学报,1996(05):110-113.

杨银堂, 恩云飞, 孙青. Calculation of Electron Power Absorption in Microwave ECR Plasma[J]. Acta Electronica Sinica, 1996, (5).
[1]杨银堂,恩云飞,孙青.微波ECR等离子体中的电子能量吸收的计算[J].电子学报,1996(05):110-113. DOI：

杨银堂, 恩云飞, 孙青. Calculation of Electron Power Absorption in Microwave ECR Plasma[J]. Acta Electronica Sinica, 1996, (5). DOI：

摘要

本文研究了ＥＣＲ系统中微波能量的耦合过程，给出了电子能量吸收的数值计算，发现ＥＣＲ共振腔内静磁场的分布、工作气压和微波功率是决定产生高能电子的主要因素，从而决定了ＥＣＲＣＶＤ薄膜淀积工艺的有关参数。进行了ＥＣＲＣＶＤＳｉＮ薄膜的工艺实验，其结果与理论计算符合得较好。

Abstract

The microwave power coupling and the power absorption by eletron in ECR system are discussed here. It is discovered that the distribution of static magnetic field in ECR resonance cave

the total pressure and the microwave power are the decisive factors for providing high energy electrons. These conditions decide the range of parameters in ECRCVD thin film deposition processes. The practical deposition research of SiN thin film by ECRCVD has been made. The experimental results are consistent with the numerical calculation.

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