您当前的位置:
首页 >
文章列表页 >
Electromagnetic Modeling and Transient Simulation of Multiconductor Transmission Line in High Speed VLSI
更新时间:2025-12-08
    • Electromagnetic Modeling and Transient Simulation of Multiconductor Transmission Line in High Speed VLSI

    • Acta Electronica Sinica   Issue 6, (1996)
    • CLC: TN454
    • Published:1996

    移动端阅览

  • 朱震海, 洪伟, 陈忆元. Electromagnetic Modeling and Transient Simulation of Multiconductor Transmission Line in High Speed VLSI[J]. Acta Electronica Sinica, 1996, (6). DOI:

  •  
  •  
icon
试读结束,您可以激活您的VIP账号继续阅读。
去激活 >
icon
试读结束,您可以通过登录账户,到个人中心,购买VIP会员阅读全文。
已是VIP会员?
去登录 >

0

Views

178

下载量

4

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Research on Mextram Model of Germanium Silicon Heterojunction Bipolar Transistor with RF Avalanche Effect
Research on Indoor Millimeter Wave 3D-MIMO Wireless Channel Parameter Extraction and Multipath Cluster Characteristics
The Establishment of High-Frequency Silicon-Based Phototransistor SPICE Model and the Extraction of Key Parameters
A New Optimizing Parameter-extraction Method for HBT’s Small-signal Equivalent Model
Genetic-Algorithm-Based Model Parameter Extraction for Sub-100nm SOI MOSFET

Related Author

LIU Yin
ZHENG Shao-hua
LIU Jing
LIAO Xi
HUANG Chen-xi
WANG Yang
CHE Yan-ting
JIANG Yan-feng

Related Institution

Department of Electronic Engineering, Xi’an University of Technology
School of Communication and Information Engineering, Chongqing University of Posts and Telecommunications
State Key Laboratory of Millimeter Wave,Southeast University
Key Laboratory of Electronic Information Control, 29th Research Institute of China Electronics Technology Group Corporation
School of Internet of Things Engineering, Jiangnan University
0