The Generation of Excess Carriers in NTDFZSi at High Temperature Annealing Process

张维连; 王志军

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The Generation of Excess Carriers in NTDFZSi at High Temperature Annealing Process

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- The Generation of Excess Carriers in NTDFZSi at High Temperature Annealing Process
- Acta Electronica Sinica Issue 2, (1996)
- 作者机构：
  
  河北工业大学材料研究中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：1996
- 稿件说明：
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[1]张维连,王志军.高温退火时NTDFZSi中产生的过剩载流子[J].电子学报,1996(02):92-95.

张维连, 王志军. The Generation of Excess Carriers in NTDFZSi at High Temperature Annealing Process[J]. Acta Electronica Sinica, 1996, (2).
[1]张维连,王志军.高温退火时NTDFZSi中产生的过剩载流子[J].电子学报,1996(02):92-95. DOI：

张维连, 王志军. The Generation of Excess Carriers in NTDFZSi at High Temperature Annealing Process[J]. Acta Electronica Sinica, 1996, (2). DOI：

摘要

为了消除辐照损伤，获得准确的目标电阻率，中子嬗变掺杂区熔硅（ＮＴＤＦＺＳｉ）通常采用７５０～８５０℃－２ｈ的退火工艺。实践中发现，采用上述工艺退火后的ＮＴＤＦＺＳｉ在大于１１５０℃－５ｈ退火时，会出现电阻率下降的现象，下降幅度在１０％～３０％左右。不中照的ＦＺＳｉ则没有观察到这种现象。这表明，在１１５０℃以上长时间退火时，ＮＴＤＦＺＳｉ中产生了过剩载流子，本文研究了这种现象产生的机理及其与辐照通量和原始晶体质量的关系。实验表明原始晶体微缺陷密度越高，辐照通量越大，电阻率偏离的程度越明显。本文认为多余载流子的产生来源于中子辐照造成的晶格损伤缺陷，并与原始单晶缺陷有关。

Abstract

In order to remove irradiation damage and achieve the exact target resistivity

the annealing technology is usually used for NTDFZSi at 750～850℃- 2h.It is found in practice that the resistivrty of NTDFZSi annealed with normal technology decreases about 10%～30% by annealing above 1150℃-5h.The results indicate that the excess carriers are generated in NTDFZSi for the annealing temperature above 1150℃.In this paper

the generation mechanism of excess carriers has been investigated

and the relationship between the excess carriers and the irradiation flux

quality of asgrown FZSi has been discussed.The experimental results show that the concentration of excess carriers increase when the concentration of as-grown micro-defects and irradiation flux are high.We think that the excess carriers are generated from the lattice damage defects caused by the neutron irradiation

and may be affected by the as-grown defects of FZSi.

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