A unified spectral analysis method using pulsed MOS C-t characteristics has been presented in the paper

which can be used to determine the minority carrier generation lifetime. This method is based on an idea that any kind of convergent relaxation process can be expressed as the damped exponential function. Here we put forward a new method with the difference sampling principle

from the transient capacitance difference spectroscopy

we can directly get the information about the minority carrier generation lifetime. We investigated some currently accepted models for the minority carrier generation lifetime

made a comparison with these different models

and found that their maximum difference is less than 10%.