High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature T<sub>c</sub>

蒋建飞; 汤玉生; 蔡琪玉

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High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature T_c

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- High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature T_c
- Acta Electronica Sinica Issue 8, (1995)
- 作者机构：
  
  上海交通大学微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN32
- Published：1995
- 稿件说明：
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[1]蒋建飞,汤玉生,蔡琪玉.栅控T_c的高温氧化物超导体场效应晶体管[J].电子学报,1995(08):15-19.

蒋建飞, 汤玉生, 蔡琪玉. High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature T_c[J]. Acta Electronica Sinica, 1995, (8).
[1]蒋建飞,汤玉生,蔡琪玉.栅控T_c的高温氧化物超导体场效应晶体管[J].电子学报,1995(08):15-19. DOI：

蒋建飞, 汤玉生, 蔡琪玉. High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature T_c[J]. Acta Electronica Sinica, 1995, (8). DOI：

摘要

本文提出了栅控超导临界温度Ｔ

ｃ

的高温氧化物超导体场效应晶体管（ＨＴＯＳｓ－ＭＯＳｕＦＥＴ）的原理。建立了场控Ｔ

ｃ

的方程，估算和分析了器件特性，对发展和研究ＨＴＯＳｓ－ＭＯＳｕＦＥＴ的器件和电路有积极的指导意义。

Abstract

This paper presents the principle of High Temperature Oxide Superconductors FieldEffect Transistor（HTOSs-MOSuFET） using gate controlled critical temperature Tc.Tc equation isestablished by gate voltage control

device characteristics are estimated and analyzed.It is very important for the development and investigation of the device and circuits of HTOSs-MOSuFET.

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High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature Tc

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High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature T_c