Two Dimensional Numerical Simulation of Deep Submicron Thin-Film SOI MOSFET

Zhang Xing

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Two Dimensional Numerical Simulation of Deep Submicron Thin-Film SOI MOSFET

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- Two Dimensional Numerical Simulation of Deep Submicron Thin-Film SOI MOSFET
- Acta Electronica Sinica Issue 11, (1995)
- 作者机构：
  
  1. 北京大学微电子学研究所
  2. 陕西微电子学研究所
  3. 北京大学微电子学研究所陕西微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TP391.9
- Published：1995
- 稿件说明：
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[1]张兴,石涌泉,黄敞.深亚微米薄膜SOI　MOSFET的二维数值模拟[J].电子学报,1995(11):93-95.

Zhang Xing. Two Dimensional Numerical Simulation of Deep Submicron Thin-Film SOI MOSFET[J]. Acta Electronica Sinica, 1995, (11).
[1]张兴,石涌泉,黄敞.深亚微米薄膜SOI　MOSFET的二维数值模拟[J].电子学报,1995(11):93-95. DOI：

Zhang Xing. Two Dimensional Numerical Simulation of Deep Submicron Thin-Film SOI MOSFET[J]. Acta Electronica Sinica, 1995, (11). DOI：

摘要

本文介绍了适合于薄膜亚微米、深亚微米ＳＯＩＭＯＳＦＥＴ的二维数值模拟软件。该模拟软件同时考虑了两种载流子的产生－复合作用，采用了独特的动态二步法求解泊松方程和电子、空穴的电流连续性方程，提高了计算效率和收敛性。利用此模拟软件较为详细地分析了薄膜ＳＯＩＭＯＳＦＥＴ不同于厚膜ＳＯＩＭＯＳＦＥＴ的工作机理及特性，发现薄膜ＳＯＩＭＯＳＦＥＴ的所有特性几乎都得到了改善。将模拟结果与实验结果进行了对比，两者吻合得较好。

Abstract

A two dimensional simulator has been developed for thin film submicron and deep submicron SOI MOSFET. In order to improve the calculation efficiency

the dynamic method of two steps has been used to solve Poisson’s equation and the current continuity equations for electrons and holes. The characteristics and mechanism of thin film SOI MOSFET have been discussed by means of simulation results. All of the characteristics of thin film deep submicron SOI MOSFET are more excellent than thick film SOI MOSFET. The simulation results are in agreement with experimental results.

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