The theoretical analysis and experimental research are made in detail on trade-off relationship between turn-off time and on-state voltage drop of the new type of polysilicon-contacted thin emitter thyristors by using the asymmetrical pin diode model and making comparisons with the conventional thyristors.The numerical calculations and experimental results show that under suitable thickness and total impurity amount of the thin emitter

not only can the turn-off time be shortened by a factor of around 1.5 compared with that of the conventional thyristors

but also the on-state voltage drop of devices is lower than that of the conventional thyristors.More significantly

when the lifetime of minority carriers in the nB base is decreased to a suitable value

the turn-off time of devices can further be shortened up to 1/2.5～1/3 of that of the conventional thyristors without the on-state properties of devices being deteriorated.