Improvement of Electron Emission Characteristics by Ion Beam Technology

柳襄怀; 朱宏; 郑志宏; 刘炎源; 吴静贤

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Improvement of Electron Emission Characteristics by Ion Beam Technology

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- Improvement of Electron Emission Characteristics by Ion Beam Technology
- Acta Electronica Sinica Issue 2, (1996)
- 作者机构：
  
  1. 中国科学院上海冶金研究所离子束开放研究实验室
  2. 中国科学院电子学研究所微波电子学研究室
  3. 中国科学院上海冶金研究所离子束开放研究实验室中国科学院电子学研究所微波电子学研究室
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN105
- Published：1996
- 稿件说明：
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[1]柳襄怀,朱宏,郑志宏,刘炎源,吴静贤.用离子束技术改善材料电子发射特性的研究[J].电子学报,1996(02):89-91.

柳襄怀, 朱宏, 郑志宏, et al. Improvement of Electron Emission Characteristics by Ion Beam Technology[J]. Acta Electronica Sinica, 1996, (2).
[1]柳襄怀,朱宏,郑志宏,刘炎源,吴静贤.用离子束技术改善材料电子发射特性的研究[J].电子学报,1996(02):89-91. DOI：

柳襄怀, 朱宏, 郑志宏, et al. Improvement of Electron Emission Characteristics by Ion Beam Technology[J]. Acta Electronica Sinica, 1996, (2). DOI：

摘要

本文用离子束技术，使铜网的二次电子发射系数降低，场发射性能得到改善，钼网的＂栅发射＂得到抑制。测量并讨论了逸出功变化对电子发射性能的影响，研究表明，离子束技术是改善材料电子发射性能的有效手段。

Abstract

The improvement of the secondary electron emission coefficient and field emission characteristice of Cu

and suppression of emission from Mo grids by ion beam technology were investigated.The influence of work function on electron emission properties was measured and discussed.Results show that the ion beam technology is a prospective and practical process for improving the electron emission characteristics.

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