BMHMT-Bi-MOS Hybrid-Mode Transistor

陈萍; 李志坚; 刘理天

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BMHMT-Bi-MOS Hybrid-Mode Transistor

更新时间：2025-12-08

- BMHMT-Bi-MOS Hybrid-Mode Transistor
- Acta Electronica Sinica Issue 11, (1995)
- 作者机构：
  
  清华大学微电子所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322.8
- Published：1995
- 稿件说明：
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[1]陈萍,李志坚,刘理天.BMHMT－Bi－MOS混合模式晶体管[J].电子学报,1995(11):11-15.

陈萍, 李志坚, 刘理天. BMHMT-Bi-MOS Hybrid-Mode Transistor[J]. Acta Electronica Sinica, 1995, (11).
[1]陈萍,李志坚,刘理天.BMHMT－Bi－MOS混合模式晶体管[J].电子学报,1995(11):11-15. DOI：

陈萍, 李志坚, 刘理天. BMHMT-Bi-MOS Hybrid-Mode Transistor[J]. Acta Electronica Sinica, 1995, (11). DOI：

摘要

本文提出了一种Ｂｉ－ＭＯＳ混合模式晶体管──ＢＭＨＭＴ，其本质上为表面ＭＯＳ与ＬＢＪＴ共同工作的四端ＭＯＳＦＥＴ，工艺上与ＭＯＳＦＥＴ全兼容。ＢＭＨＭＴ具有比单一ＭＯＳ、单一ＬＢＪＴ及他们的简单叠加更高的电流驱动能力，ＢＭＨＭＴ作为一种发射结具有赝异质结特性的器件，在输出电流为每单位宽度０．５ｍＡ时电流放大倍数可高达２５００（Ｖ＿（ＢＳ）＝０．６２Ｖ），在小的基区电流下，ＢＭＨＭＴ的短沟效应明显小于ＭＯＳＦＥＴ。ＰＩＳＣＥＳ模拟结果与实验结果成功地证明了ＢＭＨＭＴ的以上特点。

Abstract

A kind of Bi-MOS Hybrid-Mode Transistor is proposed. The structure of BMHMT is essentially a four-terminal MOSFET with MOS and LBJT working together

so the processes of BMHMT are compatible with MOSFET

The current driving capability of BMHMT is higher than any of the single MOSFET

the single LBJT or their simple combination. The experimental results show that the magnitude of current gain of BMHMT is as high as 2500(V

=0. 62V) under 0.smA collector current per unit width. Moreover

under low base current level

the short channel effect is lower than that of MOSFET. Above characteristics have been successfully proved by simulation of PISCES device simulator and experiment results.

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