Integrated Device and Circuit Simulation of Thin Film Deep Submicron CMOS/SOI Circuits

Zhang Xing

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Integrated Device and Circuit Simulation of Thin Film Deep Submicron CMOS/SOI Circuits

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- Integrated Device and Circuit Simulation of Thin Film Deep Submicron CMOS/SOI Circuits
- Acta Electronica Sinica Issue 2, (1996)
- 作者机构：
  
  1. 北京大学微电子学研究所
  2. 陕西微电子学研究所
  3. 北京大学微电子学研究所陕西微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN451.02
- Published：1996
- 稿件说明：
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[1]张兴,石涌泉,黄敞.深亚微米薄膜CMOS／SOI电路的集成器件线路模拟[J].电子学报,1996(02):96-99.

Zhang Xing. Integrated Device and Circuit Simulation of Thin Film Deep Submicron CMOS/SOI Circuits[J]. Acta Electronica Sinica, 1996, (2).
[1]张兴,石涌泉,黄敞.深亚微米薄膜CMOS／SOI电路的集成器件线路模拟[J].电子学报,1996(02):96-99. DOI：

Zhang Xing. Integrated Device and Circuit Simulation of Thin Film Deep Submicron CMOS/SOI Circuits[J]. Acta Electronica Sinica, 1996, (2). DOI：

摘要

开发了适用于薄膜亚微米、深亚微米ＣＭＯＳ／ＳＯＩ电路的集成器件线路模拟软件，该模拟软件采用集成数值模型，将薄膜ＳＯＩ器件的数值模拟与电路模拟有机地结合在一起，实现了薄膜亚微米、深亚微米ＣＭＯＳ／ＳＯＩ电路的精确数值模拟，利用这一软件较为详细地分析了硅层厚度为５０～４００ｎｍ、沟道长度为０．１５～１．０μｍ的ＣＭＯＳ／ＳＯＩ环形振荡器电路，使我们对深亚微米薄膜ＣＭＯＳ／ＳＯＩ环振的特性及工作机理有了较为清晰的认识，模拟结果与实验结果进行了对照，两者吻合得较好。

Abstract

An "Integrated Device and Circuit Simulator"for thin film（50～400nm） submicron（0.5～1.0μm） and deep submicron（0.15

0.25 and 0.3.5μm）CMOS/SOI integrated circuits has been developed.This simulator combines device numerical simulation with circuit numerical simulation by coupling connecting stage of SOI MOSFET using integrated numerical model.The characteristics and mechanism of thin film submicron and deep submicron CMOS/SOI ring oscillators are discussed.The simulation results are identical with experimental results.

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