Thin Film Fully Depleted CMOS/SOI ──The Main Technology of Next Generation Silicon VHSI and ULSI

张兴; 王阳元

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Thin Film Fully Depleted CMOS/SOI ──The Main Technology of Next Generation Silicon VHSI and ULSI

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- Thin Film Fully Depleted CMOS/SOI ──The Main Technology of Next Generation Silicon VHSI and ULSI
- Acta Electronica Sinica Issue 10, (1995)
- 作者机构：
  
  北京大学微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN301
- Published：1995
- 稿件说明：
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[1]张兴,王阳元.薄膜全耗尽CMOS／SOI──下一代超高速Si　IC主流工艺[J].电子学报,1995(10):139-143.

张兴, 王阳元. Thin Film Fully Depleted CMOS/SOI ──The Main Technology of Next Generation Silicon VHSI and ULSI[J]. Acta Electronica Sinica, 1995, (10).
[1]张兴,王阳元.薄膜全耗尽CMOS／SOI──下一代超高速Si　IC主流工艺[J].电子学报,1995(10):139-143. DOI：

张兴, 王阳元. Thin Film Fully Depleted CMOS/SOI ──The Main Technology of Next Generation Silicon VHSI and ULSI[J]. Acta Electronica Sinica, 1995, (10). DOI：

摘要

本文较为详细地分析了薄膜全耗尽ＣＭＯＳ／ＳＯＩ技术的优势和国内外ＴＦＣＭＯＳ／ＳＯＩ器件和电路的发展状况，讨论了ＳＯＩ技术今后发展的方向，得出了全耗尽ＣＭＯＳ／ＳＯＩ技术将成为下一代超高速硅集成电路主流工艺的结论。

Abstract

The potential advantages and the situation of thin-film fully depleted CMOS/SOI technology at home and abroad are discussed in this paper. The trend of developing CMOS/SOI technology is presented also. At last

the conclusion that the fully depleted CMOS/SOI will become the main technology in the next generation silicon VHSI and ULSI is obtained.

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Related Institution

Institute of Microelectronics,Peking University

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北京大学微电子学研究所陕西微电子学研究所

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