On the Subthreshold Behaviour and Low Temperature Scale Down Principles in MOSFETs

吴金; 魏同立; 于宗光

您当前的位置：

首页 >

文章列表页 >

On the Subthreshold Behaviour and Low Temperature Scale Down Principles in MOSFETs

更新时间：2025-12-08

- On the Subthreshold Behaviour and Low Temperature Scale Down Principles in MOSFETs
- Acta Electronica Sinica Issue 11, (1995)
- 作者机构：
  
  南京东南大学微电子中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.01
- Published：1995
- 稿件说明：
移动端阅览
[1]吴金,魏同立,于宗光.MOSFET亚阈特性分析与低温按比例缩小理论的研究[J].电子学报,1995(11):26-30.

吴金, 魏同立, 于宗光. On the Subthreshold Behaviour and Low Temperature Scale Down Principles in MOSFETs[J]. Acta Electronica Sinica, 1995, (11).
[1]吴金,魏同立,于宗光.MOSFET亚阈特性分析与低温按比例缩小理论的研究[J].电子学报,1995(11):26-30. DOI：

吴金, 魏同立, 于宗光. On the Subthreshold Behaviour and Low Temperature Scale Down Principles in MOSFETs[J]. Acta Electronica Sinica, 1995, (11). DOI：

摘要

器件尺寸按比例缩小是实现超大规模集成电路的有效途径，但寄生和二级效应却将器件尺寸限在一定的水平。本文在对比分析常温与低温下小尺寸器件效应的基础上，重点研究了ＭＯＳ器件亚阈特性对器件性能及按比例缩小的影响，并根据低温工作的特点，提出了ＭＯＳ器件一种低温按比例缩小规则，该原则对低温器件的优化设计，从而更大程度地提高电路与系统性能具有重要的指导意义。

Abstract

The scale down of device dimension is an effective way to realize VLSI technology

however

the dimension is limited to a definite level by the influence of some parasitic and second order effects. On the basis of comparative analysis of small devices operating at room temperature and at low temperatures

the subthreshold behaviour and its effects on the device properties and scale downprinciples are described emphatically. A kind of low temperature scale down principle is presented according to the low temperature operation characteristics

which will play an important role in low temperature MOSFET optimal design and further improvement of the circuits and systems.

关键词

Keywords

references

Views

179

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Charging Characteristics of MOSFET Memory Based on Si Nanocrystals

Two-Dimensional Model of Fully Depleted Dual-Material-Gate Single-Halo SOI MOSFET

Study on a Novel Gas Sensor

Electron Multiplication Model of EMCCD in Low Temperature

Related Author

ZHENG You-dou

HAN Ping

GU Shu-lin

YANG Hong-guan

WU Jun

YUAN Xiao-li

SHI Yi

WU Jian-min

Related Institution

南京大学物理系和固体微结构国家重点实验室

School of Electronics and Information Engineering, Xi'an Jiaotong University

Tsinghua University

University of Electronic Science and Technology of China

Shandong University

⁰