Research and Progress of Silicon Heterojunction and Pseudo-Heterojunctgion Bipolar Devices

郑茳; 许居衍

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Research and Progress of Silicon Heterojunction and Pseudo-Heterojunctgion Bipolar Devices

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- Research and Progress of Silicon Heterojunction and Pseudo-Heterojunctgion Bipolar Devices
- Acta Electronica Sinica Issue 10, (1995)
- 作者机构：
  
  东南大学－华晶无锡微电子应用研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322.8
- Published：1995
- 稿件说明：
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[1]郑茳,许居衍.硅异质结和赝异质结双极器件研究进展[J].电子学报,1995(10):144-147.

郑茳, 许居衍. Research and Progress of Silicon Heterojunction and Pseudo-Heterojunctgion Bipolar Devices[J]. Acta Electronica Sinica, 1995, (10).
[1]郑茳,许居衍.硅异质结和赝异质结双极器件研究进展[J].电子学报,1995(10):144-147. DOI：

郑茳, 许居衍. Research and Progress of Silicon Heterojunction and Pseudo-Heterojunctgion Bipolar Devices[J]. Acta Electronica Sinica, 1995, (10). DOI：

摘要

本文作者结合自己的工作，综述了硅异质结和赝异质结双极器件的研究进展，指出ＧｅＳｉＨＢＴ将成为双极结构的主流技术，硅赝异质结器件也将在低温应用等方面显示出优势。

Abstract

The research and progress of silicon heterojunction and pseudo-heterojunction bipolar devices are summarized on the basis of our previous work. It is indicated that GeSi HBT will be the dominant technique of silicon bipolar stuctures

and silicon pseudo-heterojunction bipolartransistor has the superiority for low temperature application.

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