Time-Domain Finite Difference Approach to 3D Analysis of GaAs Bulk Photoconductive Switches

马俊; 郭开周

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Time-Domain Finite Difference Approach to 3D Analysis of GaAs Bulk Photoconductive Switches

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- Time-Domain Finite Difference Approach to 3D Analysis of GaAs Bulk Photoconductive Switches
- Acta Electronica Sinica Issue 11, (1995)
- 作者机构：
  
  西安瞬态光学技术国家重点实验室
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN360.3
- Published：1995
- 稿件说明：
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[1]马俊,郭开周.超短激光脉冲触发GaAs体光导开关的三维瞬态分析[J].电子学报,1995(11):20-22+2-3+24-25.

马俊, 郭开周. Time-Domain Finite Difference Approach to 3D Analysis of GaAs Bulk Photoconductive Switches[J]. Acta Electronica Sinica, 1995, (11).
[1]马俊,郭开周.超短激光脉冲触发GaAs体光导开关的三维瞬态分析[J].电子学报,1995(11):20-22+2-3+24-25. DOI：

马俊, 郭开周. Time-Domain Finite Difference Approach to 3D Analysis of GaAs Bulk Photoconductive Switches[J]. Acta Electronica Sinica, 1995, (11). DOI：

摘要

本文采用时域有限差分法（ＴＤＦＤ），超吸收边界条件，利用半导体物理学的有关成果，归纳出适合体光导开关的三维载流子复合动力学数学模型，完成了对半导体（ＧａＡｓ）体光导开关的三维全波分析。计算了光导开关内部场和载流子的瞬态分布。本文提出的最佳设计方案，可使对激光能量的要求成倍数的降低；本文还讨论了静态场量对数值计算的影响。

Abstract

A three-dimensional recombination kinetics of carriers

adapted for GaAs bulk photoconductive semiconductor switches （PCSS）

is utilized. And three-dimensional fullwave analysis for transient EM problem of PCSS is implemented by employing both time-domain finite-difference method and superabsorption technique. Three-dimensional pictures given in this paper may be helpfulto understand transient phenomena in PCSS and the computer programmes may be useful for practice calculation. An“optimum design”is proposed

which may alleviate somewhat the major disadvantage to bulk PCSS

its requirement for large optical trigger energies. A discussion about the effect of static field components on numerical results is also given.

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