Gummel-Poon Model for Polysilicon Emitter Bipolar Transistor

郑云光; 郭维廉; 李桂华; 李树荣; 蒋翔六; 王阳元; 张利春; 吉利久

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Gummel-Poon Model for Polysilicon Emitter Bipolar Transistor

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- Gummel-Poon Model for Polysilicon Emitter Bipolar Transistor
- Acta Electronica Sinica Issue 5, (1995)
- 作者机构：
  
  1. 天津大学电子工程系
  2. 北京市科学技术研究院
  3. 北京大学微电子学研究所
  4. 天津大学电子工程系北京市科学技术研究院北京大学微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN325.2
- Published：1995
- 稿件说明：
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[1]郑云光,郭维廉,李桂华,李树荣,蒋翔六,王阳元,张利春,吉利久.多晶硅发射极晶体管（PET）Gummel－Poon模型[J].电子学报,1995(05):1-6.

郑云光, 郭维廉, 李桂华, et al. Gummel-Poon Model for Polysilicon Emitter Bipolar Transistor[J]. Acta Electronica Sinica, 1995, (5).
[1]郑云光,郭维廉,李桂华,李树荣,蒋翔六,王阳元,张利春,吉利久.多晶硅发射极晶体管（PET）Gummel－Poon模型[J].电子学报,1995(05):1-6. DOI：

郑云光, 郭维廉, 李桂华, et al. Gummel-Poon Model for Polysilicon Emitter Bipolar Transistor[J]. Acta Electronica Sinica, 1995, (5). DOI：

摘要

本文建立了能直接用于ＳＰＩＣＥ电路分析程序中的ＰＥＴ－ＧＰ模型。研究表明：可以采用两种方法来使用ＰＥＴ－ＧＰ模型。本文利用所研究器件的结构参数计算了ＰＥＴ－ＧＰ模型参数β＿Ｆ和特征频率ｆ＿Ｔ，ｆ＿Ｔ的计算和实验结果符合较好。β＿Ｆ的计算表明，所研究器件的多晶硅／硅界面复合较强，复合速度Ｓ＿ｐ达到１０￣６ｃｍ／ｓ。

Abstract

PET-GP model has been set up which can be used directly for the analytical program in SPICE circuit. The result indicates:there are two kinds of way which can be adopted to use PETGP model. In this paper

the parameter β

and cut-off frequency f

of this model have been calculated by using the structure parameters of the devices studied. The calculating value of f

and its experimented result have a better agreement. The calculation of βF indicates that the carrier recombination at polysilicon/monosilicon emitter interface for the studied devices is very strong

and the value of recombination velocity S

is up to 106cm/s.

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Related Author

Jiang Xiang liu

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Related Institution

Beijing Institute of Science and Technology, Beijing 100044)Guo Weilian, Zhang Rongmei

天津大学电子工程系

天津大学电子工程系北京 100044

天津 300072

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