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复旦大学电子工程系CAD研究室
Published:1995
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[1]何磊,章开和,唐璞山.快速时域模拟器FTSIM[J].电子学报,1995(02):17-21.
何磊, 章开和, 唐璞山. FTSIM-A Switch Level Fast Timing Simulator[J]. Acta Electronica Sinica, 1995, (2).
开关级快速时域模拟器FTSIM(FastTimingSIMulator),可对MOSLSI/VLSI数字电路进行逻辑功能和时间特性的模拟与验证;基于波形松弛算法,FTSIM首先将电路分解成直流连通单元(DCC),然后利用晶体管非线性模型按一定次序计算每个DCC的输出波形。在求解该模型特征方程的过程中,采用了电压步进方法,同时提出了处理DCC之间反馈问题的事件驱动自适应窗口算法。FTSIM可以充分利用电路的多速率特性和各类休眠特性来提高分析速度,测试结果表明,对于中规模的MOS数字电路,速度比SPICE提高2~3个数量级,而波形偏差约5%;并且速度提高随着被分析电路规模的增大而近似线性增加。由于被分析电路采用晶体管级描述,FTSIM可以用于分析门级和开关级逻辑,DOMINO结构等MOS电路,也可直接用于验证从集成电路版图中提取的MOS数字电路。
This paper presents a switch level fast timing simulator FTSIM to verify the logical behaviour and timing performance for MOS digital circuits of both prelayout and post-layout.Circuits are first partitioned into DCCs(DC-Connected Component)
then the charging and discharging of each output node of a DCC is modeled by a macromodel retaining the nonlinearity of transistors and its characteristic equation is computed by a voltage incremental technique.Besides
a heuristic eventdriven self-adaptive window algorithm is proposed to speed up waveform convergence when feedbacks present at DCC level.Testing results with benchmark circuits from industry show a speedup of 2 to 3 orders of magnitude over SPICE for medium scale circuits with typical 5% timing accuracy loss
and the speedup is nearly linear up with the circuit size.
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