The Lower Limit of the Frequency Detuning for an Injection-Locked Semiconductor Laser

Lin Linlin

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The Lower Limit of the Frequency Detuning for an Injection-Locked Semiconductor Laser

更新时间：2025-12-08

- The Lower Limit of the Frequency Detuning for an Injection-Locked Semiconductor Laser
- Acta Electronica Sinica Issue 5, (1995)
- 作者机构：
  
  郑州大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Published：1995
- 稿件说明：
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[1]李林林.注入锁定半导体激光器频率失调的下限[J].电子学报,1995(05):88-90.

Lin Linlin. The Lower Limit of the Frequency Detuning for an Injection-Locked Semiconductor Laser[J]. Acta Electronica Sinica, 1995, (5).
[1]李林林.注入锁定半导体激光器频率失调的下限[J].电子学报,1995(05):88-90. DOI：

Lin Linlin. The Lower Limit of the Frequency Detuning for an Injection-Locked Semiconductor Laser[J]. Acta Electronica Sinica, 1995, (5). DOI：

摘要

在考虑非线性增益的情况下，本文给出了注入锁定半导体激光器锁定带宽的表达式，该激光器稳定运转的失调频率下限受非线性增益的影响，特别是在激光器偏置电流较大和或非线性增益系数较大时更为如此。

Abstract

A modified formula for the locking bandwidth in an injection-locked semiconductor laser is presented by consideration of the influence of nonlinear gain. The lower limit of the frequency detuning for the laser stably operating will be reduced by this influence

especially for a laser with large bias current or with large nonlinear gain coefficient.

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