A Noval InGaAsP/InP Frequency Divider Using Electronic Tuning

蔡伯荣; 刘永智; 庞涛; 叶玉堂

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A Noval InGaAsP/InP Frequency Divider Using Electronic Tuning

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- A Noval InGaAsP/InP Frequency Divider Using Electronic Tuning
- Acta Electronica Sinica Issue 2, (1995)
- 作者机构：
  
  成都电子科技大学光电子技术系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN773
- Published：1995
- 稿件说明：
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[1]蔡伯荣,刘永智,庞涛,叶玉堂.1．55μm波长新型InGaAsP／InP电调频分器研究[J].电子学报,1995(02):68-70.

蔡伯荣, 刘永智, 庞涛, et al. A Noval InGaAsP/InP Frequency Divider Using Electronic Tuning[J]. Acta Electronica Sinica, 1995, (2).
[1]蔡伯荣,刘永智,庞涛,叶玉堂.1．55μm波长新型InGaAsP／InP电调频分器研究[J].电子学报,1995(02):68-70. DOI：

蔡伯荣, 刘永智, 庞涛, et al. A Noval InGaAsP/InP Frequency Divider Using Electronic Tuning[J]. Acta Electronica Sinica, 1995, (2). DOI：

摘要

本文提出一种新型电调频分器设计，采用ＩｎＧａＡｓＰ／ＩｎＰ双异质结（ＤＨ）脊形波导（ＲＷＧ）和分布布喇格反射器（ＤＢＲ）结构，通过改变加于器件的反偏压，由电光耦合效应改变波导折射率，以满足四频分要求，实现频率分割的目的，分析计算结果表明：对于１．５５μｍ激光束的传输，频分间隔为８ＧＨｚ时，实现四频分的外加偏压分别约为０，４，８和１２伏。

Abstract

A noval frequency divider with four frequencies using electronic tuning is proposed.The device structure is composed of an InGaAsP/InP double hetero-structure ridge waveguide

a distributed Bragg reflector configuration and a pair of electrodes.The freqency division has been demonstrated by the waveguide refractive index change induced by electro-optical effect.The research result shows:At 1.55μm wavelength

when the frequency division gap is 8GHz

the external bias voltages for four frequencyes are about 0

8 and 12 volts respectively.

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