Measurements on Electronic Field Distribution for New Types of Electron-Optic Source Device

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- Measurements on Electronic Field Distribution for New Types of Electron-Optic Source Device
- Acta Electronica Sinica Issue 5, (1995)
- 作者机构：
  
  浙江大学信息电子工程学系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248
- Published：1995
- 稿件说明：
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[1]吴小萍,朱祖华.新型光电子光源器件电场分布特性测试研究[J].电子学报,1995(05):91-93.

吴小萍, 朱祖华. Measurements on Electronic Field Distribution for New Types of Electron-Optic Source Device[J]. Acta Electronica Sinica, 1995, (5).
[1]吴小萍,朱祖华.新型光电子光源器件电场分布特性测试研究[J].电子学报,1995(05):91-93. DOI：

吴小萍, 朱祖华. Measurements on Electronic Field Distribution for New Types of Electron-Optic Source Device[J]. Acta Electronica Sinica, 1995, (5). DOI：

本文介绍了应用连续波电光检测法（ＣＷＥＯＰ）对ＧａＡｓ／ＧａＡｌＡｓ双异质结激光器及其列阵和发光管列阵电场分布进行扫描测量的结果，研究了这三种光源器件不同部位的电场分布和电力分布特点及列阵器件的发光均匀性。

Based on the new nondestuctive method-Continuous Wave Electro-Optic Probing （CWEOP）

we detected the electric field distribution for GaAs/AlGaAs LD

LD array and LED array.The features of the electric field

injected current distribution in different layer and the optic homogeneous for arrays are presented.

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