The Analytical Model of Current Gain and Cutoff Frequency of Polysilicon Emitter Transistors for Low Temperature Operation

Huang Liuxing

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The Analytical Model of Current Gain and Cutoff Frequency of Polysilicon Emitter Transistors for Low Temperature Operation

更新时间：2025-12-08

- The Analytical Model of Current Gain and Cutoff Frequency of Polysilicon Emitter Transistors for Low Temperature Operation
- Acta Electronica Sinica Issue 8, (1995)
- 作者机构：
  
  1. 西北核技术研究所
  2. 东南大学微电子中心
  3. 西北核技术研究所东南大学微电子中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322.8
- Published：1995
- 稿件说明：
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[1]黄流兴,魏同立,郑茳.低温多晶硅发射极晶体管电流增益和截止频率的解析模型[J].电子学报,1995(08):103-105.

Huang Liuxing. The Analytical Model of Current Gain and Cutoff Frequency of Polysilicon Emitter Transistors for Low Temperature Operation[J]. Acta Electronica Sinica, 1995, (8).
[1]黄流兴,魏同立,郑茳.低温多晶硅发射极晶体管电流增益和截止频率的解析模型[J].电子学报,1995(08):103-105. DOI：

Huang Liuxing. The Analytical Model of Current Gain and Cutoff Frequency of Polysilicon Emitter Transistors for Low Temperature Operation[J]. Acta Electronica Sinica, 1995, (8). DOI：

摘要

本文综合考虑了多晶硅发射极的载流子输运障碍，界面氧化物遂穿、晶粒间界杂质分凝和界面能带弯曲等因素，以及禁带变窄效应、低温下的载流子冻析效应和浅能级补偿杂质陷阱效应，建立了低温多晶硅发射极晶体管电流增益和截止频率的解析模型，对电流增益和截止频率的温度关系进行了理论分析并与３００Ｋ和７７Ｋ下的实测结果进行了比较。

Abstract

An analytical model of current gain and cutoff frequency of polysilicon emitter bipolar transistors for low temperature operation has been derived in consideration of "grain boundary mobility medel".

"oxide tunneling medel"

"segregation model"and "band-bending"at polysilicon-silicon interface

and bandgap narrowing

carrier freezeout and trapping effect of shallow level impurities at low temperature.The temperature dependence of current gain and cutoff freqnency of this kind of transistor is analyzed theoretically

and the results are compared with experimental data at 300K and 77K.

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