Influence of Implantation Conditions on Quality of SIMOX Materials

李映雪; 游曲波; 甘学温; 武国英; 王阳元; 丁富荣; 韦伦存

您当前的位置：

首页 >

文章列表页 >

Influence of Implantation Conditions on Quality of SIMOX Materials

更新时间：2025-12-08

- Influence of Implantation Conditions on Quality of SIMOX Materials
- Acta Electronica Sinica Issue 5, (1995)
- 作者机构：
  
  1. 北京大学微电子学研究所
  2. 北京大学技术物理系
  3. 北京大学微电子学研究所北京大学技术物理系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305.3
- Published：1995
- 稿件说明：
移动端阅览
[1]李映雪,游曲波,甘学温,武国英,王阳元,丁富荣,韦伦存.注入条件对SIMOX材料的影响[J].电子学报,1995(05):74-76.

李映雪, 游曲波, 甘学温, et al. Influence of Implantation Conditions on Quality of SIMOX Materials[J]. Acta Electronica Sinica, 1995, (5).
[1]李映雪,游曲波,甘学温,武国英,王阳元,丁富荣,韦伦存.注入条件对SIMOX材料的影响[J].电子学报,1995(05):74-76. DOI：

李映雪, 游曲波, 甘学温, et al. Influence of Implantation Conditions on Quality of SIMOX Materials[J]. Acta Electronica Sinica, 1995, (5). DOI：

摘要

利用ＲＢＳ和ＴＥＭ技术分析研究了不同注入剂量、注入方式（单重注入，多重注入）对ＳＩＭＯＸ材料各层结构的影响，特别着重研究了Ｓｉ／ＳｉＯ＿２界面过渡区受注入条件的影响．结果表明，在注入剂量相同的情况下，多重注入不仅能改善顶层单晶、ＳｉＯ＿２绝缘层的质量，而且能显著减小Ｓｉ／ＳｉＯ＿２界面过渡区宽度。

Abstract

The effect of implantation dose

implantation methods （Single implantation

Sequential implantation）on characteristics and structures have been described by techniques of RBS and TEM. Especially the transition region of Si/SiO2 interface is emphatically studied. The results show that the sequentical implantation and annealing（compared with single implantation in the same implantation dose）can not only evidently improve the quality of top layer and buried layer of SIMOX

but also evidently reduce the width of Si/SiO2 interface transition region.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Genetic-Algorithm-Based Model Parameter Extraction for Sub-100nm SOI MOSFET

High Quality SOI Recrystallized with Optimized Thermal Gradients at Solid- Liquid Interfaces

Design and Development of TFD SOI Gate Array

Related Author

LI Zun-chao

ZHANG Rui-zhi

ZHANG Xiao-juan

LIN Yao

张鹏飞

侯东彦

杨景铭

钱佩信

Related Institution

School of Electronics and Information Engineer,Xi’an Jiaotong University

Department of Computer Science,Qinghai Normal University

School of Electronics and Information EngineerXi’an Jiaotong UniversityXi’anShaanxi 710049China

Department of Computer ScienceQinghai Normal UniversityXiningQinghai 810008China

Institute of Microelectronics,Tsinghua University Beijing 100084)Lo Taichin

⁰