γ Radiation Effects on BF<sub>2</sub>￣+ Implanted Si-Gate PMOSFET

张廷庆; 刘家璐; 张正选; 赵元富

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γ Radiation Effects on BF₂￣+ Implanted Si-Gate PMOSFET

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- γ Radiation Effects on BF₂￣+ Implanted Si-Gate PMOSFET
- Acta Electronica Sinica Issue 2, (1995)
- 作者机构：
  
  1. 西安电子科技大学微电子所
  2. 骊山微电子研究所
  3. 西安电子科技大学微电子所骊山微电子研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN301
- Published：1995
- 稿件说明：
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[1]张廷庆,刘家璐,张正选,赵元富.BF_2~＋注入硅栅PMOSFETγ辐照效应[J].电子学报,1995(02):88-91.

张廷庆, 刘家璐, 张正选, et al. γ Radiation Effects on BF₂￣+ Implanted Si-Gate PMOSFET[J]. Acta Electronica Sinica, 1995, (2).
[1]张廷庆,刘家璐,张正选,赵元富.BF_2~＋注入硅栅PMOSFETγ辐照效应[J].电子学报,1995(02):88-91. DOI：

张廷庆, 刘家璐, 张正选, et al. γ Radiation Effects on BF₂￣+ Implanted Si-Gate PMOSFET[J]. Acta Electronica Sinica, 1995, (2). DOI：

摘要

本文系统地研究了ＢＦ

２

＋

注入硅栅ＰＭＯＳＦＥＴ阈值电压漂移与γ辐照总剂量之间的关系，深入地探讨了ＢＦ

２

＋

注入抗γ辐照加固的机理。结果表明，ＢＦ

２

＋

注入是一种抗γ辐照加固的新方法。

Abstract

The relation between threshold voltage shift of BF

￣+ implanted Si-Gate PMOSFET and total γ-radiation dose has been systematically studied

and the mechanism of γ-radiation hardness for BF

￣+ implantation has also been analysed in detail.The study shows that BF

￣+ implantation is one of the new methods on γ-radiation hardness.

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Research and Development of SIMOX Technology and CMOS/SIMOX Devices

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Wang Yangyuan

Chen Nanxiang

Wang Zhong-lie

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Institute of Microelectronics, Peking University

北京大学徽电子学研究所北京 100871

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γ Radiation Effects on BF2￣+ Implanted Si-Gate PMOSFET

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γ Radiation Effects on BF₂￣+ Implanted Si-Gate PMOSFET