A High Performace Low Temperature Silicon Bipolar Transistor

郭维廉; 郑云光; 李树荣; 张咏梅

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A High Performace Low Temperature Silicon Bipolar Transistor

更新时间：2025-12-08

- A High Performace Low Temperature Silicon Bipolar Transistor
- Acta Electronica Sinica Issue 8, (1994)
- 作者机构：
  
  天津大学电子工程系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN325.2
- Published：1994
- 稿件说明：
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[1]郭维廉,郑云光,李树荣,张咏梅.一种高性能的低温硅双极晶体管[J].电子学报,1994(08):30-35.

郭维廉, 郑云光, 李树荣, et al. A High Performace Low Temperature Silicon Bipolar Transistor[J]. Acta Electronica Sinica, 1994, (8).
[1]郭维廉,郑云光,李树荣,张咏梅.一种高性能的低温硅双极晶体管[J].电子学报,1994(08):30-35. DOI：

郭维廉, 郑云光, 李树荣, et al. A High Performace Low Temperature Silicon Bipolar Transistor[J]. Acta Electronica Sinica, 1994, (8). DOI：

摘要

本文设计并研制出在液氮温度（７７Ｋ）下，ｈＦＥ≈３００；在１０Ｋ下，ｈＦＥ＝２１．７的高性能硅双极晶体管，此值优于文献报导的水平［７］．测量了该器件在７７Ｋ的ＩＣ，ＩＢ－ＶＢＥ特性和ｈＦＥ－１／Ｔ特性，并对这些曲线的解释进行了新的理论探讨。

Abstract

The silicon bipolar transistors with hFE≈300 at 77K and hFE=21.7 at 10K (this value is better than that reported in reference[7]have been designed and fabricated. The IC

IB-VBE characteristics at 77K and hFE-1/T characteristics of the devices have been measured and an explorative explanation on them has been given by a new idea.

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