A New Type Oxygen Sensitive YSZ-Gate MOSFET and Its Response Mechanism

张之圣; 刘志刚; 张维新; 王文生

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A New Type Oxygen Sensitive YSZ-Gate MOSFET and Its Response Mechanism

更新时间：2025-12-08

- A New Type Oxygen Sensitive YSZ-Gate MOSFET and Its Response Mechanism
- Acta Electronica Sinica Issue 5, (1995)
- 作者机构：
  
  天津大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： TP212
- Published：1995
- 稿件说明：
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[1]张之圣,刘志刚,张维新,王文生.一种新型的YSZ栅MOS氧传感器及其响应机理[J].电子学报,1995(05):115-118.

张之圣, 刘志刚, 张维新, et al. A New Type Oxygen Sensitive YSZ-Gate MOSFET and Its Response Mechanism[J]. Acta Electronica Sinica, 1995, (5).
[1]张之圣,刘志刚,张维新,王文生.一种新型的YSZ栅MOS氧传感器及其响应机理[J].电子学报,1995(05):115-118. DOI：

张之圣, 刘志刚, 张维新, et al. A New Type Oxygen Sensitive YSZ-Gate MOSFET and Its Response Mechanism[J]. Acta Electronica Sinica, 1995, (5). DOI：

摘要

ＹＳＺ栅ＭＯＳ氧传感器是一种新型的氧敏器件，它是通过在场效应晶体管的绝缘栅上沉积一薄层ＹＳＺ制成，本文介绍这种传感器的响应机理，讨论ＹＳＺ固体电解质的晶体结构对电导率的影响，给出微观分析结果和对时间的迅速响应特性。

Abstract

An oxygen sensitive YSZ-Gate MOSFET is new type oxygen sensor

The sensor is fabricated by depositing a thin layer of YSZ（Yttria-Stabilized Zirconia）on a gate insulator of FET.The response mechanism of the sensor is introduced and the influence of crystal structure of YSZ solid electrolyte on its electrical conductivity is discussed.The results of microanalysis and the rapid response with time are also given.

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