A Simulation Study for Improving Low Current Characteristics in Microwave Power Transistors

Lin Xulun

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A Simulation Study for Improving Low Current Characteristics in Microwave Power Transistors

更新时间：2025-12-08

- A Simulation Study for Improving Low Current Characteristics in Microwave Power Transistors
- Acta Electronica Sinica Issue 5, (1995)
- 作者机构：
  
  北京大学微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN323.4
- Published：1995
- 稿件说明：
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[1]林绪伦,朱恩均.改善微波功率管小电流特性的模拟分析[J].电子学报,1995(05):36-39.

Lin Xulun. A Simulation Study for Improving Low Current Characteristics in Microwave Power Transistors[J]. Acta Electronica Sinica, 1995, (5).
[1]林绪伦,朱恩均.改善微波功率管小电流特性的模拟分析[J].电子学报,1995(05):36-39. DOI：

Lin Xulun. A Simulation Study for Improving Low Current Characteristics in Microwave Power Transistors[J]. Acta Electronica Sinica, 1995, (5). DOI：

摘要

对于新型Ｎ￣＋ＩＰ发射结结构的微波功率管，采用一维数值模拟，分区计算了它的渡越时间，结果表明其截止频率的小电流特性可以获得明显的改善。

Abstract

The transit times in the silicon microwave power transistors with the novel structure of N+IP emitter are regionally calculated by one-dimensional numerical simulation. The results indicate that its low current characteristics of the cut-off frequency f

can be obviously improved.

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