Direct electro-optic sampling is a very powerful technique for characterizing high speed GaAs integrated circuits on wafer

An electro-optic sampling system using semiconductor lasers has been set up. It has been used to test 43.7 ps fuli width at half maximum electric pulses generated by a comb generator

SGHz microwave signaIs

phase shift or time delay of 3GHz microwave signals and static curve of microwave ferrite phase shifter. This system will be applied to the on-wafer tests of dynamic characters of high speed GaAs integrated circuits.