An Investigation on Level Shift Characteristics for Pixel Electrode Voltage of a-Si TFT LCD

Zhang Shengdong

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An Investigation on Level Shift Characteristics for Pixel Electrode Voltage of a-Si TFT LCD

更新时间：2025-12-08

- An Investigation on Level Shift Characteristics for Pixel Electrode Voltage of a-Si TFT LCD
- Acta Electronica Sinica Issue 8, (1994)
- 作者机构：
  
  1. 南京电子器件研究所
  2. 国家平板显示工程技术中心
  3. 南京电子器件研究所国家平板显示工程技术中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN301
- Published：1994
- 稿件说明：
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[1]张盛东,薛文进.a－SiTFT　LCD象素电压跳变特性研究[J].电子学报,1994(08):59-64.

Zhang Shengdong. An Investigation on Level Shift Characteristics for Pixel Electrode Voltage of a-Si TFT LCD[J]. Acta Electronica Sinica, 1994, (8).
[1]张盛东,薛文进.a－SiTFT　LCD象素电压跳变特性研究[J].电子学报,1994(08):59-64. DOI：

Zhang Shengdong. An Investigation on Level Shift Characteristics for Pixel Electrode Voltage of a-Si TFT LCD[J]. Acta Electronica Sinica, 1994, (8). DOI：

摘要

ａ－ＳｉＴＦＴ栅源电容Ｃｇｓ不仅为栅源电极交叠所产生的寄生电容Ｃｇｓｐ，还应包括栅电极与源端沟道间的本征电容Ｃｇｓｉ．用缓变沟道近似模型推导了Ｃｇｓｉ的表达式。通过对象素电极电压跳变公式的修正，圆满解释了先前的公式所不能解释的几个实验结果，从而澄清了对电压跳变机理的模糊认识。

Abstract

The capacitance between gate and source of a-Si TFT consists of not only parasitic capacitance Cgspdue to overlaps between gate and source electrodes

but also intrinsic capacitance Cgsi between the channel at the source sied and gate electrode. The formula for Cgsi is derived from gradual channel approximate model. The revised formula for level shift voltage △Vp at pixel electrode may explain some experimental data satisfactorily

which can not be done by traditional formula for △Vp

so the ambiguous view on △Vp mechanism is clarified.

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