Some Results of Two Dimensional Deep Submicron MOSFET Simulation

Yu Shan

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Some Results of Two Dimensional Deep Submicron MOSFET Simulation

更新时间：2025-12-08

- Some Results of Two Dimensional Deep Submicron MOSFET Simulation
- Acta Electronica Sinica Issue 5, (1994)
- 作者机构：
  
  1. 北京航天部二院计算机应用和仿真技术研究所
  2. 北京师范大学低能核物理所
  3. 陕西微电子学研究所
  4. 北京航天部二院计算机应用和仿真技术研究所北京师范大学低能核物理所陕西微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386
- Published：1994
- 稿件说明：
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[1]余山,陈达,张燕文,黄敞.深亚微米MOSFET二维数值模拟的若干结果[J].电子学报,1994(05):94-97.

Yu Shan. Some Results of Two Dimensional Deep Submicron MOSFET Simulation[J]. Acta Electronica Sinica, 1994, (5).
[1]余山,陈达,张燕文,黄敞.深亚微米MOSFET二维数值模拟的若干结果[J].电子学报,1994(05):94-97. DOI：

Yu Shan. Some Results of Two Dimensional Deep Submicron MOSFET Simulation[J]. Acta Electronica Sinica, 1994, (5). DOI：

摘要

对深亚微米器件，由于工作电压下降，要求重新确定ＬＤＤ和常规ＭＯＳＦＥＴ在ＶＬＳＩ中的作用．本文从基本器件数理方程出发，对深亚微米常规及ＬＤＤＭＯＳＦＥＴ的器件特性、热载流子效应及短沟道效应进行了二维稳态数值模拟，指出了常规和ＬＤＤＭＯＳＦＥＴ各自的局限性，明确了在深亚微米ＶＬＳＩ中，ＬＤＤ仍然起主要作用。

Abstract

When device size being scaled down to deep submicron

it is requred to re-determine the position of LDD and conventional MOSFET in deep submicron VLSI because of the supply power scaling down.Based upon the principal device mathematic equations

two dimensional stable numerical simulation has been conducted to depict the device characteristics

hot carriers effect and short channel effect of LDD and conventional MOSFET in deep submicron region. The restrictions of deep submicron LDD in deep submicron VLSI fabrication has also been assured.

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