Submicron CMOS Titanium Silicide Technology

Yu Shan

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Submicron CMOS Titanium Silicide Technology

更新时间：2025-12-08

- Submicron CMOS Titanium Silicide Technology
- Acta Electronica Sinica Issue 11, (1994)
- 作者机构：
  
  1. 航天工业总公司二院计算机应用和仿真技术研究所
  2. 陕西微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.12
- Published：1994
- 稿件说明：
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[1]余山,章定康,黄敞.亚微米自对准硅化钛CMOS工艺[J].电子学报,1994(11):78-79+86.

Yu Shan. Submicron CMOS Titanium Silicide Technology[J]. Acta Electronica Sinica, 1994, (11).
[1]余山,章定康,黄敞.亚微米自对准硅化钛CMOS工艺[J].电子学报,1994(11):78-79+86. DOI：

Yu Shan. Submicron CMOS Titanium Silicide Technology[J]. Acta Electronica Sinica, 1994, (11). DOI：

摘要

本文对两步快速热退火形成ＴｉＳｉ２的工艺及其工艺的兼容性、ＴｉＳｉ２的物理化学物性进行了研究，结合ＬＤＤ结构，形成了两步快速热退火亚微米自对准硅化钛ＣＭＯＳ工艺，并应用于集成电路的制造，改善了电路性能。

Abstract

TiSi2 technology formed by two step rapid thermal annealing and its compability with other technology

and TiSi2 physical and chemical characteristics have been investigated.Combining to LDD

submicron CMOS Ti-Silicide technology formed by two step RTA

which can improve ICs characteristics

has been used for ICs fabrication.

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