A pseudo-two-dimensional model

which can simulate the characteristics of thin film fully depleted SOI short channel MOSFET’s in saturation region is developed based on a detailed analysis of special physical effects in thin film fully depleted SOI devices.The model not only physically takes account of second order effects such as carrier mobility degradation

velocity saturation and short channel effects and describes the unique film thickness and back gate effects in the SOI devices

but also guarantees the continuity of the current

output conductance and its derivative with respect to the drain voltage at the transition point from the linear to the saturation region.The computed results of the proposed model show good agreement with those obtained with two dimensional device numerical simulation.