Potential Barrier Modulation Caused by High Electric Field Stressing and Its Effects on the Measurement of Traps

刘晓卫; 许铭真; 谭长华; 王阳元

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Potential Barrier Modulation Caused by High Electric Field Stressing and Its Effects on the Measurement of Traps

更新时间：2025-12-08

- Potential Barrier Modulation Caused by High Electric Field Stressing and Its Effects on the Measurement of Traps
- Acta Electronica Sinica Issue 5, (1994)
- 作者机构：
  
  北京大学微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.1
- Published：1994
- 稿件说明：
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[1]刘晓卫,许铭真,谭长华,王阳元.高场势垒调制效应及其对陷阱测试分析的影响[J].电子学报,1994(05):47-53.

刘晓卫, 许铭真, 谭长华, et al. Potential Barrier Modulation Caused by High Electric Field Stressing and Its Effects on the Measurement of Traps[J]. Acta Electronica Sinica, 1994, (5).
[1]刘晓卫,许铭真,谭长华,王阳元.高场势垒调制效应及其对陷阱测试分析的影响[J].电子学报,1994(05):47-53. DOI：

刘晓卫, 许铭真, 谭长华, et al. Potential Barrier Modulation Caused by High Electric Field Stressing and Its Effects on the Measurement of Traps[J]. Acta Electronica Sinica, 1994, (5). DOI：

摘要

高场应力条件下，ＶＬＳＩ／ＵＬＳＩＭＯＳ结构场发射极附近的镜像力效应和半导体／氧化层界面附近半导体一侧的表面量子化效应都将影响ＭＯＳ结构的高场隧穿势垒高度及形状，本文研究了这种高场势垒调制效应及其对ＭＯＳ结构高场隧穿特性和陷阱测试分析的影响，并给出了初步的修正分析方法．

Abstract

The image force effects and quantized level effects in MOS structures under high electric field stressing will cause the variations of emitting potential barrier and Fowler-Nordheim tunneling current. In this paper

this kind of potential barrier modulation and its effects on tunneling of electrons and measurement of traps in MOS structures at high electric field have been studied. Furthermore

some corrected methods with the potential barrier modulation considered are also presented in order to get more accurate results.

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