Physics and Electrical Analysis for MLS Structure

吴金; 郑茳; 魏同立

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Physics and Electrical Analysis for MLS Structure

更新时间：2025-12-08

- Physics and Electrical Analysis for MLS Structure
- Acta Electronica Sinica Issue 11, (1994)
- 作者机构：
  
  东南大学微电子中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.6
- Published：1994
- 稿件说明：
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[1]吴金,郑茳,魏同立.MLS结构的物理与电性能分析[J].电子学报,1994(11):37-43.

吴金, 郑茳, 魏同立. Physics and Electrical Analysis for MLS Structure[J]. Acta Electronica Sinica, 1994, (11).
[1]吴金,郑茳,魏同立.MLS结构的物理与电性能分析[J].电子学报,1994(11):37-43. DOI：

吴金, 郑茳, 魏同立. Physics and Electrical Analysis for MLS Structure[J]. Acta Electronica Sinica, 1994, (11). DOI：

摘要

本文从器件物理角度出发，深入研究了ＭＬＳ结构的Ｃ－Ｖ、Ｉ－Ｖ、界面、体内电荷、击穿等电学性能，并研制成功了一种新型的具有优良电性能的ＭＬＳ结构场效应晶体管，所得实验结果与理论相吻合。

Abstract

C-V

I-V

interface

charge density and breakdown characteristics of MLS stucture are deeply studied in terms of device physics in this paper

and a new type of MLS structure field effect transistor with high electrical performance is developed.The experimental results of MLSFET fit well with the theoretical analysis.

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