BEM Numerical Simulation of High Voltage MZ-JTE

Liang Sujun; Luo Jinsheng

您当前的位置：

首页 >

文章列表页 >

BEM Numerical Simulation of High Voltage MZ-JTE

更新时间：2025-12-08

- BEM Numerical Simulation of High Voltage MZ-JTE
- Acta Electronica Sinica Issue 11, Pages: 51-56(1993)
- 作者机构：
  
  1. 西安交通大学电子工程系
  2. 西安交通大学电子工程系西安 710049
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1993
- 稿件说明：
移动端阅览
[1]梁苏军,罗晋生.高压MZ-JTE终端边界元数值模拟[J].电子学报,1993(11):51-56.

Liang Sujun, Luo Jinsheng. BEM Numerical Simulation of High Voltage MZ-JTE[J]. Acta Electronica Sinica, 1993, (11): 51-56.
[1]梁苏军,罗晋生.高压MZ-JTE终端边界元数值模拟[J].电子学报,1993(11):51-56. DOI：

Liang Sujun, Luo Jinsheng. BEM Numerical Simulation of High Voltage MZ-JTE[J]. Acta Electronica Sinica, 1993, (11): 51-56. DOI：

摘要

本文采用边界元数值方法

编制了统一的多区结终端扩展（Multiple-Zone Junction Termination Extension

MZ-JTE）边界元程序

模拟高压MZ-JTE终端电场、电位分布

以平面结算例验证了边界元数值解精度及可靠性

定量模拟了界面态影响

取得了与国外用差分或有限元得到的结论相一致的结果。边界元方法的提出与算法、程序的成功开发

为MZ-JTE结构及其它终端结构的深入研究与分析

为最终解决复杂（合）终端结构的最佳设计开辟了一条新路。

Abstract

A novel unified 2-D program with the boundary element method（BEM） for MZ-JTE is developed.The distributions of electric field and potential and the effect of-surface charge on high-voltage MZ-JTE are simulated.The BEM results are in agreement with ones obtained by the finite difference method （FDM） and the finite element method （FEM）.The presentation of BEM and the successful development of the program have opened a new way for analyses and designs of junction terminations.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Numerical Simulation and Experimental Study of Photo-Bidirectional Negative Resistance Transistor

Two Dimensional Numerical Simulation of Deep Submicron Thin-Film SOI MOSFET

Numerical Analysis of Bidirectional Negative Resistance Device

Numerical Simulation for Coupled-Cavity Slow-Wave Structure by Using MAFIA Code

The Numerical Analysis of Multi Pulse Discharge Characteristies in AC PDP by One Dimensional Fluid Discharge Model

Related Author

ZHENG Yun-guang

MAO Lu-hong

LIANG Hui-lai

GUO Wei-lian

ZHANG Shi-lin

MO Tai-shan

黄敞

石涌泉

Related Institution

School of Electronic Information Engineering,Tianjin University

Institute of Microelectronics,Peking University,Beijing 100871)Shi Yongquan

Huang Chang

北京大学微电子学研究所陕西微电子学研究所

Semiconductor Labratory,Dalian University of Technology,DaLian 116023)Li Fengyin

⁰