Potential and Developing Trends of Silicon Ultrafast Bipolar Technology

魏同立; 郑茳

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Potential and Developing Trends of Silicon Ultrafast Bipolar Technology

更新时间：2025-12-08

- Potential and Developing Trends of Silicon Ultrafast Bipolar Technology
- Acta Electronica Sinica Issue 2, (1994)
- 作者机构：
  
  南京东南大学微电子中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322.8
- Published：1994
- 稿件说明：
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[1]魏同立,郑茳.硅超高速双极技术的潜力与变革方向[J].电子学报,1994(02):76-80.

魏同立, 郑茳. Potential and Developing Trends of Silicon Ultrafast Bipolar Technology[J]. Acta Electronica Sinica, 1994, (2).
[1]魏同立,郑茳.硅超高速双极技术的潜力与变革方向[J].电子学报,1994(02):76-80. DOI：

魏同立, 郑茳. Potential and Developing Trends of Silicon Ultrafast Bipolar Technology[J]. Acta Electronica Sinica, 1994, (2). DOI：

摘要

本文评述了硅超高速双极技术的研究现状与极限，指出ＳｉＧｅ异质结构将显著提高现有纯Ｓｉ器件的电性能，并将成为发展下一代硅超高速双极器件和电路的技术途径。

Abstract

The research status and limitation of silicon ultrafast bipolar technology are reviewed in this paper.It is indicated that the SiGe heterostructure improves evidently the electrical performance of the pure silicon devices

which provides a new technical way for the development of silicon ultrahigh speed devices and circuits.

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