Properties of Sensitivity of GaAs MESFET to Stress

孙金坛; 陈军宁

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Properties of Sensitivity of GaAs MESFET to Stress

更新时间：2025-12-08

- Properties of Sensitivity of GaAs MESFET to Stress
- Acta Electronica Sinica Issue 2, (1994)
- 作者机构：
  
  合肥工业大学应用物理系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：1994
- 稿件说明：
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[1]孙金坛,陈军宁.GaAs　MESFET的压力敏感特性[J].电子学报,1994(02):89-91.

孙金坛, 陈军宁. Properties of Sensitivity of GaAs MESFET to Stress[J]. Acta Electronica Sinica, 1994, (2).
[1]孙金坛,陈军宁.GaAs　MESFET的压力敏感特性[J].电子学报,1994(02):89-91. DOI：

孙金坛, 陈军宁. Properties of Sensitivity of GaAs MESFET to Stress[J]. Acta Electronica Sinica, 1994, (2). DOI：

摘要

本文研究了ＧａＡｓＭＥＳＦＥＴ对应力的敏感特性，分析了敏感原理。对ＧａＡｓＭＥＳＦＥＴ用作力学量传感器的可能性进行了讨论。

Abstract

Properties of sensitivity of GaAs MESFET to stress were investigated.The sensitive principle was analysed.The possibility of fabricating force sensor using GaAs MESFET was discussed.

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