Development of 0.50μm LDD PMOS Technology

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Development of 0.50μm LDD PMOS Technology

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- Development of 0.50μm LDD PMOS Technology
- Acta Electronica Sinica Issue 2, (1994)
- 作者机构：
  
  1.   北京航空航天部二院
  2.   计算机应用和仿真技术研究所
  3.   陕西微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305
- Published：1994
- 稿件说明：
移动端阅览
[1]余山,章定康,黄敞.0．50微米LDD　PMOS工艺研究[J].电子学报,1994(02):96-99.

YuShan. Development of 0.50μm LDD PMOS Technology[J]. Acta Electronica Sinica, 1994, (2).
[1]余山,章定康,黄敞.0．50微米LDD　PMOS工艺研究[J].电子学报,1994(02):96-99. DOI：

YuShan. Development of 0.50μm LDD PMOS Technology[J]. Acta Electronica Sinica, 1994, (2). DOI：

摘要

为了保证高可靠亚微米ＶＬＳＩ的实现，必须有效地抑制ＰＭＯＳ严重的热载流子效应。本文对０．５０μｍＬＤＤＰＭＯＳ工艺进行了研究，表明，ＬＤＤ可有效地克服ＰＭＯＳ的热载流子效应和短沟道效应，并对ＬＤＤ结构进行了老化分析，得到了ＬＤＤＰＭＯＳ的优化工艺条件，并将这优化的工艺条件应用于亚微米集成电路的制造。

Abstract

In order to develpo high reliatrility submicron VLSI

it is necessary to suppress the serious PMOS hot carriers effect effectively.The investigation of 0.50μm LDD PMOS process indicates that LDD can suppress the hot carriers effect and short channel effect of PMOS greatly.The optimum LDD PMOS process

which has been applied to submicron ICs fabrication

has been devloped finally.

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