Realization of a 1300V and a 1600V IGBT

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- Realization of a 1300V and a 1600V IGBT
- Acta Electronica Sinica Issue 11, Pages: 39-43(1993)
- 作者机构：
  
  电子科技大学微电子科学与工程系,成都,610054
- 作者简介：
- 基金信息：
- DOI：
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- Published：1993
- 稿件说明：
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[1]杨谟华.1300V、1600V高压IGBT的实现[J].电子学报,1993(11):39-43+30.

Yang Mohua. Realization of a 1300V and a 1600V IGBT[J]. Acta Electronica Sinica, 1993, (11): 39-43.
[1]杨谟华.1300V、1600V高压IGBT的实现[J].电子学报,1993(11):39-43+30. DOI：

Yang Mohua. Realization of a 1300V and a 1600V IGBT[J]. Acta Electronica Sinica, 1993, (11): 39-43. DOI：

本文基于理论分析和实验研究

分别在n

外延和硅单晶基片上实现了1300V及1600V高压IGBT;并进而证实了获得高压IGBT相互关联的关键技术——器件纵向横向几何结构及工作参数的准确计量优化

低缺陷密度高性能厚层硅材料的工艺生长技术

和复合高压终端结构的叠加组合形成。

Based on the theoretical analysis and experimental studies

a 1300V and a 1600V IGBT were realized by making use of n-/n+/p+ epitaxial layers and bulk silicon material

respectively.Furthermore

the related key techniques of obtaining a high voltage IGBT have been identified

which are accurate design and optimization of the device longitudinal and lattitudinal structure and electrical parameters

technological preparation of high quality thick Si layers with low defect levels

and formation of the composite junction-termination by both superposition and combination.

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